ds30167 rev. 6 - 2 1 of 3 mmsta55/mmsta56 www.diodes.com diodes incorporated mmsta55/mmsta56 pnp small signal surface mount transistor epitaxial planar die construction complementary npn type available (mmsta05/mmsta06) ideal for medium power amplification and switching ultra-small surface mount package available in lead free/rohs compliant version (note 2) features maximum ratings @ t a = 25 c unless otherwise specified a m j l e d b c h k g b e c mechanical data case: sot-323 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminal connections: see diagram terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish annealed over alloy 42 leadframe). please see ordering information, note 5, on page 2 mmsta55 marking k2h, k2g (see page 2) mmsta56 marking k2g (see page 2) ordering & date code information: see page 2 weight: 0.006 grams (approximate) characteristic symbol mmsta55 mmsta56 unit collector-base voltage v cbo -60 -80 v collector-emitter voltage v ceo -60 -80 v emitter-base voltage v ebo -4.0 v collector current - continuous (note 1) i c -500 ma power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 k/w operating and storage and temperature range t j ,t stg -55 to +150 c sot-323 dim min max a 0.25 0.40 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal e 0.30 0.40 g 1.20 1.40 h 1.80 2.20 j 0.0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.18 0 8 all dimensions in mm note: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad lay out document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. no purposefully added lead. e b c
ds30167 rev. 6 - 2 2 of 3 mmsta55/mmsta56 www.diodes.com characteristic symbol min max unit test condition off characteristics (note 3) collector-base breakdown voltage mmsta55 mmsta56 v (br)cbo -60 -80 v i c = -100 a, i e = 0 collector-emitter breakdown voltage mmsta55 mmsta56 v (br)ceo -60 -80 v i c = -1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo -4.0 v i e = -100 a, i c = 0 collector cutoff current mmsta55 mmsta56 i cbo -100 na v cb = -60v, i e = 0 v cb = -80v, i e = 0 collector cutoff current mmsta55 mmsta56 i cex -100 na v ce = -60v, i bo = 0v v ce = -80v, i bo = 0v on characteristics (note 3) dc current gain h fe 100 i c = -10ma, v ce = -1.0v i c = -100ma, v ce = -1.0v collector-emitter saturation voltage v ce(sat) -0.25 v i c = -100ma, i b = -10ma base-emitter saturation voltage v be(sat) -1.2 v i c = -100ma, v ce = -1.0v small signal characteristics current gain-bandwidth product f t 50 mhz v ce = -1.0v, i c = -100ma, f = 100mhz electrical characteristics @ t a = 25 c unless otherwise specified ordering information (note 4) device packaging shipping mmsta55-7 MMSTA56-7 sot-323 3000/tape & reel notes: 3. short duration test pulse used to minimize self-heating effect. 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. for lead free/rohs compliant version part numbers, please add "-f" suffix to the part numbers above. examp le: MMSTA56-7-f. marking information k2x ym k2x = product type marking code, e.g. k2h = mmsta55 ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd
ds30167 rev. 6 - 2 3 of 3 mmsta55/mmsta56 www.diodes.com 0 0.05 0.10 0.15 0.20 0 . 2 5 110 100 1000 v , collector to emitter ce(sat) saturation voltage (v) i , collector current (ma) c fig. 2, collector emitter saturation voltage vs. collector current i c i b =10 t = -50c a t = 25c a t = 150c a 0 50 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient tem p erature 100 150 200 0 1 0.1 0.1 10 100 v , base emitter voltage (v) be(on) i , collector current (ma) c fi g . 4 base emitter volta g e vs. collector current 0.2 0.3 0.4 0.6 0.5 0.8 0.7 0.9 1 . 0 v= 5v ce t= 25c a t = -50c a t = 150c a 10 1000 100 1 10 1000 100 h , dc current fe gain (normalized) i , collector current (ma) c fig. 3, dc current gain vs collector current t = -50c a t=25c a t = 150c a v=5v ce 1 10 100 1 10 100 i , collector current (ma) c fi g . 5 gain bandwidth product vs. collector current f , gain bandwidth product (mhz) t v= 5v ce
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